unisonic technologies co., ltd 4N60K p o w e r m o s f e t www.unisonic.com.tw 1 of 9 copyright ? 2014 unisonic technologies co., ltd qw-r502-806.d 4a, 600v n-channel power mosfet ? descripti on t he u t c 4N60K is a hi gh voltag e po w e r mosf et and is desig ne d to have better ch aracteristics, such as fast sw itc h in g time, lo w gate charg e , lo w on-state res i stance an d h a v e a hig h rugg ed av ala n che ch aracteri stics. t h is po w e r mosf et is usua ll y used at hi gh s pee d s w itch ing app licati ons i n po w e r sup p li e s, pw m motor controls , high effici ent dc to dc c onverters and bridg e circuits. ? features * r ds (on) < 2 . 5 ? @v gs = 10 v * ultra lo w gat e char ge ( t y p i cal 15 n c ) * lo w reverse t r ansfer capacit ance ( c rs s = ty p i cal 8.0 pf ) * fast s w itchi n g cap abi lit y * avala n che e nerg y sp ecifie d * improved dv/ d t capa bil i t y , h i gh ru gg edn es s ? sy mbol t o -251 1 1 to- 2 2 0 f 1 to -22 0 f 1 ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lea d free halogen free 1 2 3 4n60 kl-tf3-t 4N60Kg-tf3-t to-220f g d s tube 4n60 kl-tf1-t 4N60Kg-tf1-t to-220f1 g d s tube 4N60Kl-t m3-t 4N60Kg-tm3-t to-251 g d s tube note: pin assignment: g: gate d: drain s: source http://
4N60K power m o sfet unisonic technologi es co., ltd 2 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ? mar k ing i n formati o n package marking to-220f to-220f1 to-251
4N60K power m o sfet unisonic technologi es co., ltd 3 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ? absolute maxi mu m ra ting s (t c = 25 , unless other w i se specifie d) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 600 v gate-source voltage v gss 30 v avala n che c u r r ent (note 2) i ar 4.4 a drain current contin uo us i d 4.0 a pulse d (note 2 ) i dm 16 a avalanche energy singl e puls ed ( note 3) e as 100 mj repetitiv e (not e 2) e ar 10.6 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns power dissipation t o -220f /t o-2 20f 1 p d 36 w to-251 50 junctio n t e mperature t j + 150 operatin g t e mperatur e t opr -55 ~ + 150 storage t e mperature t st g -55 ~ + 150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitiv e rati ng : pulse w i dth lim ited b y m a xim u m juncti on temperature 3. l = 12.5mh, i as = 4a, v dd = 5 0 v, r g = 25 ? , starting t j = 2 5 c 4. i sd 4.4a, di/dt 200a/ s, v dd bv ds s , starti ng t j = 25c ? th er mal dat a paramet er symbol rat i ngs unit junctio n to ambient t o -220f /t o-2 20f 1 ja 62.5 /w to-251 83 junction to case t o -220f /t o-2 20f 1 jc 3.47 /w to-251 2.5
4N60K power m o sfet unisonic technologi es co., ltd 4 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ? electric al ch ara cteri s tic s (t c = 25 , unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t yp max unit off characteristics drain-source breakd o w n vo l t age bv ds s v gs =0 v, i d = 250 a 600 v drain-s ource l eaka ge curr en t i ds s v ds = 600v, v gs =0 v 1 0 a v ds = 600v, v gs =0 v, t c = 125 10 a gate-source l eaka ge curr en t fo rw ard i gss v gs = 30v, v ds =0v 100 na reverse v gs = -30v, v ds = 0 v -100 na breakd o w n vo l t age t e mperature co efficient bv ds s / t j i d = 250 a,ref e rence d to 25c 0.6 v/ on characteristics gate t hreshold voltage v gs ( th ) v ds =v gs , i d = 250 a 2.0 5.0 v static drain-s ource on-state resistance r ds ( on ) v gs =10 v, i d =2.2a 2.2 2.5 ? dynamic characteristics input cap a cita nce c iss v ds = 25v, v gs = 0 v , f = 1mhz 520 670 pf output capac itance c oss 70 90 pf reverse t ransfer capacitance c rss 8 11 pf switching characteristics t urn-on delay time t d ( on ) v dd = 300v, i d = 4.0a, r g = 25 ? (note 1, 2) 13 35 ns t u rn-on rise t i me t r 45 100 ns t urn-off delay time t d ( off ) 25 60 ns t urn-off fall time t f 35 80 ns t o tal gate charge q g v ds = 480v,i d = 4.0a, v gs = 10v (note 1, 2) 15 20 nc gate-source c harge q gs 3.4 nc gate-drain charge q gd 7.1 nc source- dr a i n diode r a t i ngs a n d ch a r a c te ristics drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i s = 4.4a 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 4.4 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 17.6 a reverse recover y time t r r v gs = 0 v , i s = 4.4a, di f /dt = 100 a/ s (note 1) 250 ns reverse recover y charge q rr 1.5 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4N60K power m o sfet unisonic technologi es co., ltd 5 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * d v/dt control l ed b y r g * i sd co ntrol l ed b y p u l se peri o d * d.u.t.-de vice un der test - + peak dio d e reco v e r y d v /d t t est circu i t p. w. period d= v gs (d r i ve r) i sd (d .u .t . ) i fm , b ody di od e fo rward c u rren t di /d t i rm bo dy dio de r e ve rse curre nt bo dy di ode reco very dv/dt bod y d iod e fo rwa r d voltag e dro p v dd 10v v ds (d.u.t. ) v gs = p.w. period peak dio d e r eco v e r y d v /d t w a v e fo rms
4N60K power m o sfet unisonic technologi es co., ltd 6 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ? test circuits and waveforms (cont.) v ds 90 % 10% v gs t d( o n) t r t d( of f ) t f s w itch ing t est circu i t sw it c h i n g w ave f o r m s 10 v charge q gs q gd q g v gs gate ch arg e t est circu i t gate charge wav e form v dd t p time bv dss i as i d( t) v ds(t ) unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
4N60K power m o sfet unisonic technologi es co., ltd 7 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ? ty pic al c h ara ct e ris tic s drain-source breakdown voltage, bv dss (normalized) (v) drain-source on-resistance, r ds(on) (normalized) ( ? ) 10 1 10 0.1 1 drain - to-so u rc e voltage, v ds (v) on- s tate chara c te ristics 0.1 2 gat e -sou rce volt age , v gs (v) transfe r ch ara c t e ris t i c s 46 8 1 0 150 notes: 1. v ds =50v 2. 250s p u lse test 10 1 0.1 25 5. 0 v not e s: 1. 2 50s puls e t e st 2. t c =25 v gs t op: 10v 9v 8v 7v 6v 5.5v 5 v b o ttor m :5.0v
4N60K power m o sfet unisonic technologi es co., ltd 8 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ? ty pic a l c h ara ct e r is tic s ( c ont.) 12 00 0 0.1 drain-sourcevoltage, v ds (v) 10 00 200 110 c iss 800 600 no t e s: 1. v gs =0v 2. f = 1mhz c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance characteristics (non-repetitive) 0 total gate charge, q g (nc) 5 15 25 note: i d =4a 8 10 12 10 6 4 2 0 v ds =120v v ds =300v v ds =4 80v 20 ga te c h a r ge ch ara c te rist ics c oss c rss 400 thermal response, jc (t) p d (w)
4N60K power m o sfet unisonic technologi es co., ltd 9 of 9 w w w . uniso nic.co m.t w q w - r 50 2- 806 .d ut c as s um es no r es pons i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r oduc t s at v al ues t hat exceed, ev en m o m ent ar i l y , r a t ed v a l ues ( s uc h as m a x i m u m r a t i n g s , op era t i ng c o ndi t i on ra nges , o r ot her par am et er s ) l i s t ed i n pr oduc t s s pec i f i c at i ons of any and al l ut c pr oduc t s des c r i bed or c ont ai ned her ei n. ut c pr oduc t s are not des i gned f or us e i n l i f e s uppor t appl i anc es , dev i c es or s y s t em s w her e m a l f unc t i on of t hes e pr oduc t s c an be r eas ona bl y ex pec t ed t o res u l t i n per s ona l i n j u r y . re pro duc t i on i n w hol e or i n pa rt i s pr ohi bi t ed w i t hout t he pri o r w r i t t en c ons ent o f t he c o p y r i ght ow ner. t he i n f o r m at i o n pr es ent e d i n t h i s doc um en t do es not f o r m p a rt of any quo t a t i on or c ont r a c t , i s bel i e v ed t o be ac c u r a t e and r el i a bl e and m ay b e c hanged w i t hout n ot i c e.
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